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| Datasheet File OCR Text: |
| process CPS130 silicon controlled rectifier 16 amp sensitive gate scr chip princip al device types cs220-16m series csdd-16m series process glass passivated mesa die size 130 x 130 mils die thickness 8.7 mils cathode bonding pad area 99 x 49 mils gate bonding pad area 42 x 42 mils top side metalization al - 45,000? back side metalization al/mo/ni/ag - 32,000? process details 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com geometry r0 (4- january 2006) gross dier per 4 inch w afer 624
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